 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MCT5210 MCT5211 AlGaAs LED/ Phototransistor Optocoupler FEATURES * Current Transfer Ratio MCT5210, >70% at IF=3.0 mA MCT5211, >110% at IF=1.0 mA * Saturation CTR-MCT5211, >100% at IF=1.6 mA * High Isolation Voltage, 5300 VACRMS * Underwriters Lab File #E52744 * VDE #0884 Available with Option 1 DESCRIPTION The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VACRMS. Because these parts have guaranteed CTRs at one and three mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6 V Continuous Forward Current .............................40 mA Power Dissipation at 25C................................. 75 mW Derate Linearly from 25C .......................... 1.0 mW/C Detector Collector-Emitter Breakdown Voltage.................... 30 V Emitter-Collector Breakdown Voltage...................... 7 V Collector-Base Breakdown Voltage....................... 70 V Power Dissipation............................................ 200 mW Derate Linearly from 25C .......................... 2.6 mW/C Package Isolation Test Voltage..............................5300 VACRMS Total Package Dissipation at 25C Ambient (LED + Detector) .............. 260 mW Derate Linearly from 25C .......................... 3.5 mW/C Leakage Path ............................................. 7 mm min. Clearance Path............................................ 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ........................... 175 Isolation Resistance VIO=500 V, TA=25C .................................... 1012 VIO=500 V, TA=100C .................................. 1011 Operating Temperature ..................... -55C to +100C Storage Temperature......................... -55C to +150C Dimensions in inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 2 1 Anode 1 Cathode 2 4 5 6 6 5 4 .300 (7.62) typ. Base Collector Emitter .335 (8.50) .343 (8.70) .039 (1.00) min. 4 typ. .018 (0.45) .022 (0.55) .048 (1.22) .052 (1.32) NC 3 .130 (3.30) .138 (3.50) 18 .031 (.080) min. .031 (.80) .035 (.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.30) Electrical Characteristics (25C) Parameter Emitter Forward Voltage Reverse Voltage Detector HFE BVCEO BVECO BVCBO ICEO Package (0-70C) Saturated Current Transfer Ratio MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 Saturation Voltage MCT5210 MCT5211 Symbol VF VR Min. Typ. 1.2 Max. Unit 1.5 V V Condition IF=5 mA IR=10 A VCE=5 V IC=100 A 6 100 30 7 70 5 100 200 V V V nA IC=100 A IE=100 A IE=10 A VCE=10 V VCE=0.4 V CTRCEsat CTRCEsat CTRCEsat CTR CTR CTR CTRCB CTRCB CTRCB VCEsat VCEsat 60 100 75 70 150 110 0.2 0.3 0.25 120 200 150 150 300 225 0.4 0.6 0.5 0.25 0.25 % % % % % % % % % 0.4 0.4 IF=3.0 mA IF=1.6 mA IF=1.0 mA VCE=5.0 V IF=3.0 mA IF=1.6 mA IF=1.0 mA VCE=4.3 V IF=3.0 mA IF=1.6 mA IF=1.0 mA IF=3.0 mA IC=1.8 mA IF=1.6 mA IC=1.6 mA Current Transfer Ratio Collector-Base Current Transfer Ratio V V 1 Characteristics -- continued Parameter Symbol Min. Typ. Max. Unit Condition Switching Characteristics (25C) Propagation Delay --High to Low MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 tPHL tPHL tPHL tPLH tPLH tPLH 10 20 40 10 20 40 s s s s s s RL=330 , IF=3.0 mA, VCC=5.0 V RL=750 , IF=1.6 mA, VCC=5.0 V RL=1.5 , IF=1.0 mA, VCC=5.0 V RL=330 , IF=3.0 mA, VCC=5.0 V RL=750 , IF=1.6 mA, VCC=5.0 V RL=1.5 , IF=1.0 mA, VCC=5.0 V Propagation Delay --Low to High Figure 1. Forward current vs. forward voltage FORWARD VOLTAGE 35 30 Ta = 25C IF - LED Current - mA 25 20 15 10 5 0 1.0 Figure 4. Collector base photocurrent vs. LED current S CU 300 250 Ta = 25C 200 150 100 50 0 Icb - PHOTOCURRENT - A Figure 7. Collector base current transfer ratio vs. LED current 1.0 CTRcb - COLLECTOR BASE - CTR - % 0.8 0.6 TA = 25C 0.4 0.2 0.0 0 5 10 15 20 25 IF - LED CURRENT - mA 30 35 1.1 1.2 1.3 VF - LED Forward Voltage - V 1.4 0 5 10 15 20 25 30 35 40 IF - LED CURRENT - mA Figure 2. LED forward current vs. forward voltage 100 IF - LED CURRENT - mA Figure 5. Photocurrent vs. LED current 1000 Icb - PHOTOCURRENT - A Ta = 25C 100 Figure 8. Collector base current transfer ratio vs. LED current 1.0 CTRcb - COLLECTOR BASE - CTR - % 0.8 Ta = 25C 10 0.6 TA = 25C 0.4 10 1 1 0.2 .1 1.0 .1 1.1 1.2 1.3 VF - LED FORWARD VOLTAGE - V 1.4 .1 1 10 100 IF - LED CURRENT - mA 0.0 .1 1 10 IF - LED CURRENT - mA 100 Figure 3. Switching waveform IF Figure 6. Switching schematic Figure 9. Current transfer ratio ratio vs. LED current 700 Ta = 25C 600 500 Vce 400 10 V 300 200 100 .1 5V 2V 1V 0.4 V 1 10 IF - LED CURRENT - mA 100 VCC = 5 V RATIO - % INPUT tD VO tR tPLH VTH=1.5 V tPHL tS tF RL VOUT 2 MCT5210/5211 Figure 10. Collector current vs. LED current 80 Ice - COLLECTOR CURRENT - mA Ta = 25C 70 60 50 40 30 20 10 0 0 5 10 15 20 IF - LED CURRENT - mA 25 2V 1V 0.4 V Vce 10 V 5V Figure 14. Transfer curve 100 IF - LED CURRENT - mA Vce = 0.4V, Ta = 25C Ice = Icb x HFE 10 500 400 1 300 200 .1 .1 1 10 100 Icb - PHOTOCURRENT - A 100 1000 700 HFE - TRANSISTOR GAIN 600 Figure 11. Collector current vs. LED current 100 Ice - COLLECTOR CURRENT - mA Ta = 25C 10 V 5V 2V 1V 0.4 V Vce Figure 15. Propagation delay vs. base emitter resistor 70 PROPAGATION DELAY - s 60 tPLH 50 40 30 20 10 10 5 tPHL Ta = 25C IF = 1mA RL= 10K Vth = 1.5V Vce = 5V 10 1 .1 .1 1 10 IF - LED CURRENT - mA 100 10 6 Rbe - BASE EMITTER RESISTOR - 10 7 Figure 12. Transistor current gain vs. base current 800 HFE - DC CURRENT GAIN - (Ice/Ib) 700 Ta = 25C 600 500 400 300 200 100 .1 2V 1V 0.4 V 1 10 100 Ib - BASE CURRENT - A 1000 Vce 10 V 5V Figure 16. Propagation delay vs. base emitter resistor 50 PROPAGATION DELAY - s 40 tPLH 30 Ta = 25C IF = 1.6mA RL= 4.7K Vth = 1.5V Vce = 5V 20 10 tPHL 10 6 Rbe - BASE EMITTER RESISTOR 10 7 0 10 5 Figure 13. Transfer curve 100 IF - LED CURRENT - mA Vce =10V, Ta =25C 800 Figure 17. Propagation delay vs. base emitter resistor 40 PROPAGATION DELAY - s 35 30 tPLH 25 20 15 10 5 0 10 4 tPHL Ta = 25C IF = 3mA RL= 3K Vth = 1.5V Vce = 5V 10 Ice = Icb x HFE 700 1 600 .1 .1 1 10 100 Icb - PHOTOCURRENT - A 500 1000 HFE - TRANSISTOR GAIN 10 5 10 6 Rbe - BASE EMITTER RESISTOR - 10 7 3 MCT5210/5211 |
Price & Availability of MCT5211
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |